Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb„Mg1/3Nb2/3...O3„90%...– PbTiO3„10%... relaxor thin films

نویسندگان

  • V. Nagarajan
  • C. S. Ganpule
  • B. Nagaraj
  • S. Aggarwal
  • S. P. Alpay
  • A. L. Roytburd
  • E. D. Williams
  • R. Ramesh
چکیده

The effect of heteroepitaxy-induced constraint on the structure and piezoelectric properties of the relaxor ferroelectric lead magnesium niobate–lead titanate ~PMN–PT! were investigated. Relaxor PMN–PT epitaxial thin films with oxide electrodes were grown by pulsed-laser deposition on ~100! LaAlO3 substrates. We observe a systematic decrease in the phase transition temperature ~temperature at which a maximum in dielectric response occurs!, from around 250 to around 60 °C as the relaxor thickness is increased from 100 to 400 nm. This is accompanied by an increase in the relative dielectric constant (er), measured at room temperature and 10 kHz, from 300 to 2000. The piezoelectric coefficient d33 measured using a scanned probe microscope, increase by almost an order of magnitude with increasing film thickness. © 1999 American Institute of Physics. @S0003-6951~99!01952-X#

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Orientation dependence of electromechanical properties of relaxor based ferroelectric single crystals.

The orientation dependence of electromechanical properties of relaxor based ferroelectric single crystals Pb(Zn1/3Nb2/3)O3-(6-7)%PbTiO3 and Pb(Mg1/3Nb2/3)O3-33%PbTiO3 has been calculated by coordinate transformation. Different from previous studies, the optimum cutting orientations have been predicted in terms of their piezoelectric responses in the corresponding crystal planes. The calculation...

متن کامل

Energy-storage properties and high-temperature dielectric relaxation behaviors of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 ceramics

1 − x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 (x = 0, 5, and 10 mol%) ceramics were prepared using a conventional mixed oxide solid state reaction method. The low-temperature relaxor behavior of (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 ceramics were examined in the temperature range from 120 to 523 K. A broad dielectric maximum that shifted to higher temperatures with increasing frequency, signified the relaxor-type b...

متن کامل

Piezoresponse force microscopy studies on the domain structures and local switching behavior of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

Related Articles Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films AIP Advances 2, 042104 (2012) Nanodomain structures formation during polarization reversal in uniform electric field in strontium barium niobate single crystals J. Appl. Phys. 112, 064117 (2012) The effect of the top electrode interface on the hysteretic behavior of epitaxial...

متن کامل

In-situ neutron diffraction study of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3- PbTiO3 single crystals under uniaxial mechanical stress

Related Articles The comprehensive phase evolution for Bi2Te3 topological compound as function of pressure J. Appl. Phys. 111, 112630 (2012) The structural stability of AlPO4-5 zeolite under pressure: Effect of the pressure transmission medium J. Appl. Phys. 111, 112615 (2012) Strain-assisted bandgap modulation in Zn based II-VI semiconductors Appl. Phys. Lett. 100, 241903 (2012) Effect of α-β ...

متن کامل

Complete set of elastic, dielectric, and piezoelectric constants of [011]C poled rhombohedral Pb(In0.5Nb0.5)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3:Mn single crystals.

Mn modified rhombohedral Pb(In0.5Nb0.5)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT:Mn) single crystals poled along [011]C crystallographic direction exhibit a "2R" engineered domain configuration, with macroscopic mm2 symmetry. The complete sets of material constants were determined using combined resonance and ultrasonic methods, and compared to [001]C poled PIN-PMN-PT:Mn crystals. The thickness sh...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999